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Single Crystal Substrate

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China LiNbO3 crystal, Lithium Niobium(LiNbO3) factory

LiNbO3 crystal, Lithium Niobium(LiNbO3)

Major capability parameter Growth method Czochralski method Crystal structure M3 Unit cell constant a=b=5.148Å c=13.863 Å Melt point(℃) 1250 Density(g/cm3) 4.64 Hardness 5(mohs) Through scope 0.4-2.9um Index of ... Read More
2016-05-14 21:40:45
China DKDP factory

DKDP

Transparency range, nm 160-2800 nm Lengh tolerance, mm +0/-0.1 Aperture tolerances, mm +0/-0.1 Orientation accuracy of cut angle < 30 arcmin Surface quality 20-10 S-D Surface Flatness L/8 @ 632.8 nm Parallelism ... Read More
2014-06-24 08:21:58
China LiTaO3 single crystal substrate factory

LiTaO3 single crystal substrate

Major capability parameter Material purity >99.995% Crystal structure M6 Unit cell constant a=5.154Å c=13.783 Å Melt point(℃) 1650 Density 7.45(g/cm3) Hardness 5.5~6(mohs) Color Colorless Index of refraction no... Read More
2014-06-24 08:21:58
China Ge single crystal substrate factory

Ge single crystal substrate

Major capability parameter Growth method Czochralski method Crystal structure M3 Unit cell constant a=5.65754 Å Density 5.323g/cm3 Melt point 937.4℃ Doped material No doped Sb-doped In / Ga –doped Type / N P ... Read More
2014-06-24 08:21:58
China LaAlO3 single crystal substrate factory

LaAlO3 single crystal substrate

Single crystals of lanthanum aluminate (LaAlO3) is the most important industrialized , large-size high-temperature superconducting thin film substrate single crystal material. Its growth with the Czochralski ... Read More
2014-06-24 08:21:58
China SrTiO3 single crystal substrate factory

SrTiO3 single crystal substrate

SrTiO3 single crystal has also been used widely for special optical windows and as high quality sputtering target. We has the full production capacity to manufacture first the high purity SrTiO3 powder, then ... Read More
2014-06-24 08:21:58
China MgO single crystal substrate factory

MgO single crystal substrate

MgO single substrate can be used to create a mobile communications equipment required for high-temperature superconducting microwave filters and other devices. We used a chemical mechanical polishing which may ... Read More
2014-06-24 08:21:58
China GaP single crystal substrate factory

GaP single crystal substrate

Major capability parameter single crystal Doped conduction type concentration of flows cm-3 Density cm-2 Growth method Max size Substrate GaP S Undoped N N 2~8×1017 2~6×1016 Read More
2014-06-24 08:21:57
China TeO2 single crystal substrate factory

TeO2 single crystal substrate

Major capability parameter density(g/cm3) 6 Melt point (℃) 733 hardness (Mohs) 4 color clarity/colorless Clarity wave(mm) 0.33-5.0 Light transmittance@632.8nm >70% refraction@632.8nm ne =2.411 no= 2.258 thermal ... Read More
2014-06-24 08:21:57
China Si factory

Si

Major capability parameter Crystal Structure M3 Melt point(℃) 1420 Density 2.4(g/cm3) Doped material No doped Type P Resistivity 10-3~40Ωcm E P D ≤100∕cm2 O Content(∕cm3) ≤1~1.8×1018 C Content(∕cm3) ≤5×1016 ... Read More
2014-06-24 08:21:57
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